Study on the cleaning of silicon after CMP in ULSI

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 433-437

  Liu, Yuling ^a   Zhang, Kailiang ^a   Wang, Fang ^b   Han, Yunpeng ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Cleaning; CMP; Preferential adsorption model; Surfactant; ULSI

Indexed keywords

CHEMICAL CLEANING; CHEMICAL MECHANICAL POLISHING; IMPURITIES; INTERFACIAL ENERGY; PROTECTIVE COATINGS; SURFACE ACTIVE AGENTS; ULSI CIRCUITS;

PHYSICAL ADSORPTION STATES;

SILICON WAFERS;

EID: 0037394719     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00906-1     Document Type: Conference Paper

References (5)

1. Hattori T., Ruzyllo V.J., Novak R. Wafer cleaning. J. Electrochem. Soc. 97:(35):1998;1.
2. Hymes D., Malik I. Brush scrubbing emerges as future wafer-cleaning technology. Solid State Technol. 7:1997;209-214.
3. H. Gu, A study of the mechanism and removal techniques of the particle contamination on Si wafer in ULSI. Hebei University of Technology master's degree dissertation, Tianjin, 2001.
4. Liu Y., Liu N., Cao Y. Investigation on adsorption state of surface adsorbate on silicon wafer. Rare Metal. 18:(2):1999;106-112.
5. Zhang K., Liu Y., Wang F. Study on controlling the adsorption state of particle on the polished silicon wafer. B.-Z Li, G.-P. Ru, P. Yu, H. Iwai (Eds,), The Sixth International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2001, People Post & Telecommunications, Publishing House, Beijing;464-467.