Strong graded interface related exciton energy blueshift in InxGa1-xN/GaN quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 22-23

  Caetano, E W S ^a   Mesquita, M V ^a   Freire, V N ^a   Farias, G A ^a  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

Confined excitons; Graded interface; InxGa1 xN GaN quantum dots; Strain effects

Indexed keywords

EXCITONS; GALLIUM NITRIDE; INTERFACES (MATERIALS); POLARIZATION; STRAIN;

EXCITON ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037391454     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00709-9     Document Type: Conference Paper

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