Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

Microelectronics Journal

Volumn 34, Issue 4, 2003, Pages 305-312

  Yuan, Tian ^a   Jin, Chua Soo ^a   Jin, Yixin ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Detectivity; GaInAsSb GaSb; Infrared photodetectors; Noise mechanisms; Triple layer structure

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; HETEROJUNCTIONS; INTERFACES (MATERIALS); PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM COMPOUNDS;

HETEROINTERFACES;

INFRARED DETECTORS;

EID: 0037382273     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(02)00102-7     Document Type: Article

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