Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (1 1 1)B GaAs substrates: The effect of ultrathin GaAs buffer layers

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 317-322

  Sugahara, S ^a,b   Tanaka, M ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Magnetic tunnel junction; A1. Tunneling magnetoresistance; A3. Molecular beam epitaxy; B1. GaAs; B1. MnAs

Indexed keywords

CRYSTAL GROWTH; INTERFACES (MATERIALS); MAGNETIC PROPERTIES; MAGNETIZATION; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; SINGLE CRYSTALS; SURFACE ROUGHNESS;

BUFFER LAYERS;

TUNNEL JUNCTIONS;

EID: 0037381606     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02280-7     Document Type: Conference Paper

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