Growth characteristics and tunneling magnetoresistance of MnAs/AlAs/MnAs trilayer heterostructures grown on vicinal GaAs(1 1 1)B substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 582-588

  Sugahara, Satoshi ^a,b   Tanaka, Masaaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaAs(1 1 1)B; Magnetic tunnel junction; MnAs; Tunneling Magnetoresistance

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; FERROMAGNETISM; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM ARSENIDE;

MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNELING MAGNETORESISTANCE;

HETEROJUNCTIONS;

EID: 0036492893     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00189-3     Document Type: Article

References (10)