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Volumn 227-228, Issue , 2001, Pages 847-851

Ferromagnet (MnAs)/semiconductor (GaAs, AlAs, InAs)/ferromagnet (MnAs) trilayer heterostructures: Epitaxial growth and magnetotransport properties

(2) Tanaka, M a,b Takahashi, K a

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Arsenates; B1. Manganites; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

ENERGY GAP; FERROMAGNETIC MATERIALS; MAGNETIC VARIABLES MEASUREMENT; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING MANGANESE COMPOUNDS; SUBSTRATES;

MANGANITES;

HETEROJUNCTIONS;

EID: 0035399292 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00899-5 Document Type: Conference Paper

Times cited : (13)

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