Growth dynamics of InGaAs/GaAs by MBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 203-210

  Fournier, Françoise ^a   Metzger, Robert A ^a   Doolittle, Alan ^a   Brown, April S ^a   Carter Coman, Carrie ^a   Jokerst, Nan Marie ^a   Bicknell Tassius, Robert ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ARSENIC; COMPOSITION EFFECTS; DESORPTION; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

DESORPTION MASS SPECTROMETRY (DMS);

HETEROJUNCTIONS;

EID: 0031144931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00888-3     Document Type: Article

References (14)

1. K. Woodbridge, Appl. Phys. Lett. 60 (1992).
2. C. Carter-Coman, A.S. Brown, R. Bicknell-Tassius, N.M. Jokerst, F. Fournier and D.E. Dawson, J. Vac. Sci. Technol. B 14 (1996).
3. C. Carter-Coman, A.S. Brown, R. Bicknell-Tassius, N.M. Jokerst and M. Allen, Appl. Phys. Lett. 69 (1996).
4. J.-P. Reithmaier, H. Riechert and H. Schlotterer, J. Crystal Growth 111 (1990) 407.
5. K.R. Evans, C.E. Stutz, E.N. Taylor and J.E. Ehret, J. Vac. Sci. Technol. B 9 (1991).
6. A.J. Spring Thorpe and P. Mandeville, J. Vac. Sci. Technol. B 6 (1988).
7. K.R. Evans, R. Kaspi, J.E. Ehret and M. Skowronski, J. Vac. Sci. Technol. B 13 (1995).
8. Y.C. Kao, F.G. Celii and H.Y. Liu, J. Vac. Sci. Technol. B 11 (1993).
9. C.E.C. Wood and B.A. Joyce, J. Appl. Phys. 49 (1978).
10. C.T. Foxon and B.A. Joyce, J. Crystal Growth 44 (1978) 75.
11. Yu.O. Kanter, A.K. Gutakovsky, A.A. Fedorov, M.A. Revenko, S.V. Rubanov and S.I. Stenin, Thin Solid Films 163 (1988) 497.
12. K. Radhakrishnan and S.F. Yoon, R. Gapalakrishnan and K.L. Tan, J. Vac. Sci. Technol A 12 (1994).
13. 1-xAs) is the lattice parameter in ångstrom.
14. J. Nagle, J.P. Landesman, M. Larive, C. Mottet and P. Bois, J. Crystal Growth 127 (1993) 550.