Growth dynamics of InGaAs by MBE: process simulation and theoretical analysis

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 21-26

  Colayni, Golshan ^a   Venkat, Rama ^a  

^a UNIVERSITY OF NEVADA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; CRYSTAL GROWTH; DESORPTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; SURFACE PHENOMENA; THERMAL EFFECTS;

RATE EQUATION; SURFACE SEGREGATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0033903831     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00774-5     Document Type: Article

References (18)

1. Fournier Franciose, Metzger Robert A., Doolittle Alen J. Crystal Growth. 175/176:1997;203.
2. Evans K.R., Stutz C. J. Vac. Sci. Technol. B. 9:1991;2427.
3. Zhang J., Foxon C. J. Crystal Growth. 111:1991;93.
4. Mesrine M., Massies J., Leroux M. J. Crystal Growth. 175/176:1997;1242.
5. Evans K., Stutz C. J. Crystal Growth. 95:1989;197.
6. Evans K., Kaspi R., Ehret J.E., Skowronski M., Jones C.R. J. Vac. Sci. Technol. B. 13:1995;1820.
7. Kaspi R., Evans K. Appl. Phys. Lett. 67:1995;819.
8. Kao Y., Celli F. J. Vac. Sci. Technol. B. 11:1993;1023.
9. Muraki K., Fukatsu S. Appl. Phys. Lett. 61:1992;557.
10. Woodbridge Karl Appl. Phys. Lett. 60:1992;2911.
11. Evans K., Stutz C. Appl. Surf. Sci. 56-58:1992;677.
12. Gerard Jean-Michel J. Crystal Growth. 150:1995;467.
13. Radhakrishnan K., Yoon S. J. Vac. Sci. Technol. A. 12:1994;1124.
14. Toyoshima H., Niwa T. Appl. Phys. Lett. 63:1993;821.
15. Foxon C., Joyce B. J. Crystal Growth. 44:1978;75.
16. Mozume Teruo, Ohbu Isao Japan J. Appl. Phys. 31:1993;3277.
17. Houzay F., Moison J.M., Guille C., Barthe F., Van Rompay M. J. Crystal Growth. 95:1989;35.
18. Fujita S., Nakaoka Y., Uemura T., Tabuchi T. J. Crystal Growth. 95:1989;224.