Finding possible transition states of defects in silicon-carbide and alpha-iron using the dimer method

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 202, Issue , 2003, Pages 1-7

  Gao, Fei ^a   Henkelman, Graeme ^b   Weber, William J ^a   Corrales, L Rene ^a   Jónsson, Hannes ^b  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF WASHINGTON   (United States)

Author keywords

Defect migration; Defects and defect clusters; Dimer method; SiC and Fe; Transition states

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIMERS; ION IMPLANTATION; POINT DEFECTS; POTENTIAL ENERGY; SILICON CARBIDE;

DEFECT MIGRATION;

NUCLEAR INSTRUMENTATION;

EID: 0037377426     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01822-0     Document Type: Conference Paper

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