Initial buffer layers on the growth of InGaP on Si by MBE

Materials Research Society Symposium - Proceedings

Volumn 441, Issue , 1997, Pages 33-38

  Kawanami, H ^a   Ghosh, S ^a   Sakata, I ^a   Sekigawa, T ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SURFACE CLEANING; SURFACE STRUCTURE;

INTERFACIAL BUFFER LAYERS;

SEMICONDUCTING FILMS;

EID: 0030660031     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)