Crossing point current of electron and proton irradiated power P-i-N diodes

Microelectronics Reliability

Volumn 40, Issue 3, 2000, Pages 427-433

  Vobecky J ^a   Hazdra, P ^a   Humbel, O ^b   Galster, N ^c  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b ETH ZURICH   (Switzerland)

^c ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SURGES; ELECTRON IRRADIATION; PROTON IRRADIATION; THERMAL EFFECTS;

CROSSING POINT CURRENT; HIGH CURRENT POWER MODULES;

SEMICONDUCTOR DIODES;

EID: 0033896995     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00244-9     Document Type: Article

References (13)

1. Porst A, Auerbach F, Brunner H, Deboy G, Hille F. Improvement of the diode characteristics using emitter-controlled principles (EMCON-DIODE). In: Proceedings of the ISPSD'97, Weimar. 1997. p. 213-6.
2. Pendharkar S, Shenai K. Optimization of the anti-parallel diode in an IGBT module for hard-switching applications. IEEE Trans on Electron Devices 1997;44:879-86.
3. Rahimo MT, Shammas NYA. Design considerations of the diode effective area with regard to the reverse recovery performance. In: Proceedings of the 4th ISPS'98, Prague. 1998. p. 77-81.
4. Humbel O, Galster N, Bauer F, Fichtner W. 4.5 kV-Fast-diodes with expanded SOA using a multi-energy proton lifetime control technique. In: Proceedings of the ISPSD'99, Toronto. 1999. p. 121-4.
5. Galster N, Frecker M, Carroll E, Vobecky J, Hazdra P. Application-specific fast-recovery diode: design and performance. In: Proceedings of Power Conversion, Intelligent Motion and HFPC Conference, Yokohama. 1998. p. 69-82.
6. Henry CH, Lang DV. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP. Physical Review B 1977;15:989-1016.
7. Brotherton SD, Bradley P. Defect production and lifetime control in electron and γ-irradiated silicon. Journal of Applied Physics 1982;53:5720-32.
8. Hallén A, Keskitalo N. Lifetime in proton irradiated silicon. Journal of Applied Physics 1996;79:3906-14.
9. Keskitalo N. Irradiation induced defects for lifetime control in silicon. PhD thesis, Uppsala University, 1997.
10. Spurny F, Hazdra P, Vobecky J. Lifetime profiles of ion irradiated devices. In: Proceedings of the ISPS'96, Prague. 1996. p. 11-7.
11. Hazdra P, Vobecky J. Accurate simulation of fast ion irradiated power devices. Solid-State Electronics 1994;37:127-34.
12. Vobecky J, Hazdra P, Homola J. Optimization of power diode characteristics by means of ion irradiation. IEEE Transactions on Electron Devices 1996;43:2283-9.
13. ATLAS User's Manual, SILVACO Int., Santa Clara, 1998.