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Volumn 249, Issue 3-4, 2003, Pages 538-543
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The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate
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Author keywords
A1. Photoluminescence; A3. Epilayer; A3. Metalorganic chemical vapor deposition; B2. Semiconducting II VI materials
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Indexed keywords
COMPOSITION;
EXCITONS;
MANGANESE ALLOYS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
RAPID THERMAL ANNEALING;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
SUBSTRATES;
X RAY DIFFRACTION ANALYSIS;
EPILAYERS;
SEMICONDUCTOR GROWTH;
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EID: 0037365078
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(02)02354-0 Document Type: Article |
Times cited : (5)
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References (13)
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