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Volumn 249, Issue 3-4, 2003, Pages 538-543

The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate

Author keywords

A1. Photoluminescence; A3. Epilayer; A3. Metalorganic chemical vapor deposition; B2. Semiconducting II VI materials

Indexed keywords

COMPOSITION; EXCITONS; MANGANESE ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

EID: 0037365078     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02354-0     Document Type: Article
Times cited : (5)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.