Nitridation of GaAs(100) wafers for the preparation of zincblende-structure thick GaN layers

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1213-1216

  Yamamoto, A ^a   Shin ya, T ^a   Yamauchi, Y ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

GaAs(100) Wafer; GaN; NH3; Nitridation; Zincblende Structure

Indexed keywords

AMMONIA; CRYSTAL STRUCTURE; DIFFUSION IN SOLIDS; DISSOCIATION; NITRIDES; NITRIDING; SPECIMEN PREPARATION; THERMAL EFFECTS;

GALLIUM NITRIDE; ZINCBLENDE STRUCTURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031652183     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1213     Document Type: Article

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