Magnetic-field effects in defect-controlled ferromagnetic Ga1-xMnxAs semiconductors

Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1845-1847

  Dos Santos, Raimundo R ^a   D'Albuquerque e Castro, José ^a   Oliveira, Luiz E ^b  

^a FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^b UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; CRYSTAL DEFECTS; FERROMAGNETIC MATERIALS; MAGNETIC COUPLINGS; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; MANGANESE; SEMICONDUCTOR DOPING;

DILUTED MAGNETIC SEMICONDUCTORS (DMS);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037320052     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1534622     Document Type: Article

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