Sites and motion of Mu- defect centers in n-type gallium nitride

Physica B: Condensed Matter

Volumn 289-290, Issue , 2000, Pages 542-545

  Lichti, R L ^a   Cox, S F J ^b,c   Dawdy, M R ^a   Head, T L ^a   Hitti, B ^d   Molnar, R J ^e   Schwab, C ^f   Vaudo, R P ^g  

^a TEXAS TECH UNIVERSITY   (United States)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d TRIUMF   (Canada)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f CNRS   (France)

^g Advanced Technology Materials Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; HYDROGEN; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE; LEVEL CROSSING RESONANCE; MUON;

ATOMIC PHYSICS;

EID: 0033703793     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(00)00247-7     Document Type: Article

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