Muonium transitions in n-type gallium nitride

Physica B: Condensed Matter

Volumn 289-290, Issue , 2000, Pages 546-549

  Dawdy, M R ^a   Lichti, R L ^a   Cox, S F J ^b,c   Head, T L ^a   Schwab, C ^d  

^a TEXAS TECH UNIVERSITY   (United States)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE; KUBO-TOYABE COMPONENTS; MUON SPIN RESONANCE; MUONIUM; ZERO-FIELD RELAXATION;

ATOMIC PHYSICS;

EID: 0033704496     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(00)00248-9     Document Type: Article

References (7)

1. R.L. Lichti, in: N. Nickel (Ed.), Hydrogen in Semiconductors II, Vol. 61, Semiconductors and Semimetals, Academic Press, San Diego, 1999, p. 311.
2. S.R. Kreitzman et al., Phys. Rev. B 51 (1995) 13 117.
3. S.J. Pearton, J.W. Lee, in: N. Nickel (Ed.), Hydrogen in Semiconductors II, Vol. 61, Semiconductors and Semimetals, Academic Press, San Diego, 1999, p. 441.
4. S.F.J. Cox, P.J.C. King et al., Physica B 289-290 (2000), these proceedings.
5. R.L. Lichti et al., Physica B 273-274 (1999) 116.
6. R.L. Lichti et al., Physica B 289-290 (2000), these proceedings.
7. M.R. Dawdy, M.S. Thesis, Texas Tech University, 1999, Unpublished.