Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 25-27

  Marie, X ^a   Barrau, J ^a   Amand, T ^a   Carrere H ^b   Arnoult, A ^b   Fontaine, C ^b   Bedel Pereira, E ^b  

^a CNRS   (France)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; HAMILTONIANS; MATHEMATICAL MODELS; NITRIDES; OPTICAL PROPERTIES; PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BAND ANTICROSSING MODEL; OPTICAL DIPOLE MOMENTS; OPTICAL GAIN; PHOTOCURRENT SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037307178     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030187     Document Type: Article

References (14)

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