A study on growth characteristics of GaN layers grown by MOCVD on Si (111) substrate

Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

  Shin, H Y ^a   Yang, C W ^a   Jung, S H ^a   Yoo, J B ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

AlN; GaN; Metalorganic chemical vapor deposition (MOCVD)

Indexed keywords

EID: 0037307103     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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