Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 503-506

  Yamaguchi, S ^a   Iwamura, Y ^a   Watanabe, Y ^b   Kosaki, M ^b   Yukawa, Y ^b   Nitta, S ^b   Kamiyama, S ^b   Amano, H ^b   Akasaki, I ^b  

^a KANAGAWA UNIVERSITY   (Japan)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

A1. Doping; A1. P type doping; A3. Metalorganic vapor phase epitaxy; B1. GaN; B1. Nitrides

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); METALLORGANIC VAPOR PHASE EPITAXY;

HOLE CONCENTRATION;

GALLIUM NITRIDE;

EID: 0037291993     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01841-9     Document Type: Conference Paper

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