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Volumn 56, Issue 23, 1997, Pages 15277-15281

Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field

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Indexed keywords


EID: 0001499318     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.15277     Document Type: Article
Times cited : (16)

References (19)
  • 11
    • 24644501792 scopus 로고    scopus 로고
    • (a) S. M. Sze, The Physics of Semiconductor Devices (Wiley, New York, 1981), p. 276
    • Z. Sobiesierski, D. I. Westwood, and D. A. Woolf, J. Vac. Sci. Technol. B 14, 3065 (1996); (a) S. M. Sze, The Physics of Semiconductor Devices (Wiley, New York, 1981), p. 276.
    • (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 3065
    • Sobiesierski, Z.1    Westwood, D.2    Woolf, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.