InAs δ-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 328-332

  Hazdra, P ^a   Voves, J ^a   Oswald, J ^b   Hulicius, E ^b   Pangrac J ^b   Simecek T ^b  

^a CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

A1. Electroluminescence; A1. Isovalent layers; A1. Photocurrent spectroscopy; A3. Metalorganic vapor phase epitaxy; B2. InAs GaAs

Indexed keywords

ELECTROLUMINESCENCE; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

PHOTOCURRENT SPECTROSCOPY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037291741     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01823-7     Document Type: Conference Paper

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