InAs/GaAs lasers with very thin active layer

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 233-236

  Oswald, J ^a   Hulicius, E ^a   Pangrac J ^a   Melichar, K ^a   Simecek T ^a   Petricek O ^a   Vancura M ^a   Hradil, J ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; FILM PREPARATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS; THIN FILMS;

INDIUM ARSENIDE;

QUANTUM WELL LASERS;

EID: 0034503908     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01513-3     Document Type: Article

References (7)

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