Effect of incorporation efficiency on dopant behaviors in selective-area metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 685-688

  Ekawa, Mitsuru ^a   Fujii, Takuya ^a   Tanahashi, Toshiyuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ORGANOMETALLICS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES;

SELECTIVE AREA EPITAXY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030672731     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00574-X     Document Type: Article

References (9)

1. H. Kobayashi, M. Ekawa, N. Okazaki, O. Aoki, S. Ogita and H. Soda, IEEE Photon. Technol. Lett. 6 (1994) 1080.
2. M. Aoki, H. Sano, M. Suzuki, M. Takahashi, K. Uomi and A. Takai, Electron. Lett. 27 (1991) 2138.
3. T. Fujii, M. Ekawa and S. Yamazaki, J. Appl. Phys. 78 (1995) 5373.
4. M. Ekawa, T. Fujii and S. Yamazaki, Proc. 7th InP and Related Materials International Conference (1995) p. 337.
5. T. Sasaki, M. Kitamura and I. Mito, J. Crystal Growth 132 (1993) 435.
6. T. Itagaki, T. Kimura, K. Goto, Y. Mihashi, S. Takamiya and S. Mitsui, J. Crystal Growth 145 (1994) 256.
7. C. Caneau, R. Bhat, C.C. Chang, K. Kash and M.A. Koza, J. Crystal Growth 132 (1993) 364.
8. F. Scholz, D. Ottenwalder, M. Eckel, M. Wild, G. Frankowsky, T. Wacker and A. Hangleiter, J. Crystal Growth 145 (1994) 242.
9. M. Gibbon, J.P. Stagg, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchard, N. Collis and A. Chew, Semicond. Sci. Technol. 8 (1993) 998.