Electrical properties of ferroelectric BaMgF 4 films grown on GaAs substrates using AlGaAs buffer layer

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 418-422

  Hayashi, Tomoki ^a   Yoshihara, Makoto ^a   Ohmi, Syun Ichiro ^a   Tokumitsu, Eisuke ^a   Ishiwara, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Al; As; BaMgF 4; Ferroelectrics; Ga; Nonvolatile memory

Indexed keywords

ALUMINUM COMPOUNDS; CHARGE TRANSFER; FERROELECTRIC MATERIALS; FILM GROWTH; LEAKAGE CURRENTS; MESFET DEVICES; NONVOLATILE STORAGE; POLARIZATION; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

CAPACITANCE VOLTAGE CHARACTERISTICS; POLARIZATION ELECTRIC FIELD CHARACTERISTICS;

BARIUM COMPOUNDS;

EID: 0031548549     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80117-1     Document Type: Article

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