Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures: An overview

Journal De Physique. IV : JP

Volumn 6, Issue 3, 1996, Pages 145-149

  Aniel, F ^a   Sylvestre, A ^a   Jin, Y ^b   Crozat, P ^a   De Lustrac, A ^a   Adde, R ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); LOW TEMPERATURE OPERATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

CLASSICAL SHORT CHANNEL EFFECTS; CURRENT DENSITIES; IMPACT IONIZATION; TRAPPING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030120594     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Review

References (7)

1. F. Aniel et al, Journal de Phys. IV, (1994) pp. C6-171.
2. A. Sylvestre et al. Journal de Phys. IV, (1994), pp. C6-153.
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4. F. Aniel et al. Journal of Applied Physics, 77 (5), (1995), pp.2184-2189.
5. A. Sylvestre et al.", ESSDERC'95, (1995), pp. 463-466.
6. S. Lepaul et al., ESSDERC95, (1995), pp.303-306.
7. P. Dollfus et al, Journal of Applied Physics, 73(2), (1993), pp. 804