Al2O3/InP structure with less oxides of InP fabricated by helicon-wave excited O2-Ar plasma treatment of Al/InP

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 4 B, 1999, Pages

  Motegi, Tomoyuki ^a   Tomita, Junji ^a   Ikoma, Hideaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ARGON; CAPACITANCE; COMPOSITION EFFECTS; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; OXYGEN; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

HELICON-WAVE EXCITED PLASMA (HWP) TREATMENT;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0032650258     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l420     Document Type: Article

References (14)