Formation of ordered helium pores in amorphous silicon subjected to low-energy helium ion irradiation

Technical Physics

Volumn 48, Issue 1, 2003, Pages 68-72

  Reutov, V F ^a   Sokhatskii A S ^a  

^a JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

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[No Author keywords available]

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EID: 0037276148     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1538730     Document Type: Article

References (16)

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