Structural modifications in silicon irradiated successively by N+ and He+ or Ar8+ and He+ ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 149, Issue 3, 1999, Pages 319-324

  Reutov, V F ^a   Sokhatsky, A S ^a   Kutner, V B ^a   Lebedev, A N ^a  

^a JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; DEFECTS; INTERFACES (MATERIALS); ION BEAMS; ION IMPLANTATION; IONS; TRANSMISSION ELECTRON MICROSCOPY;

RADIATION DEFECTS;

ION BOMBARDMENT;

EID: 0033076491     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00913-6     Document Type: Article

References (10)

1. Deweerd W., Moons R., Verheyden J., Bukshpan S., Langouche G., Pattyn H. Nucl. Instr. and Meth. B. 106:1995;252.
2. Wong-Leung J., Williams J.S., Nygren E. Nucl. Instr. and Meth. B. 106:1995;424.
3. Myers S.M., Petersen G.A., Follstaedt D.M., Headley T.J., Michael J.R., Seager C.H. Nucl. Instr. and Meth. B. 120:1996;43.
4. P.A. Stolk, H.J. Gossmann, D.J. Eaglesham, J.M. Poate, Proceedings of the 10th International Conference on Ion Implantation Technology, Catania, 1994, Nucl. Instr. and Meth. B 96 (1995) 187.
5. A. Claverie, L. laanab, C. Bonafos, C. Bergaud, A. Martinez, D. Mathiot, Proceedings of the 10th International Conference on Ion Implantation Technology, Catania, 1994, Nucl. Instr. and Meth. B 96 (1995) 202.
6. Bonafos C., Martinez A., M Faye M., Bergaud C., Mathiot D., Claverie A. Nucl. Instr. and Meth. B. 106:1995;222.
7. Suprun-Belevich Yu., Palmetshofer L. Nucl. Instr. and Meth. B. 106:1995;262.
8. Cluster J.S., Thompson M.O., Jacobson D.C., Poate J.M., Roorda S., Sinke W.C., Spaepen F. Appl. Phys. Lett. 64(4):1994;437.
9. V.F. Reutov, Invention certificate No. 1753889, date 11.03.90, USSR (in Russian).
10. V.F. Reutov, A.S. Sokhatsky, Dubna, 1997, JINR preprint P14-97-199 (in Russian).