XPS depth profile analysis of passivation layer formed on (100) GaAs surface

Electron Technology (Warsaw)

Volumn 29, Issue 2-3, 1996, Pages 286-290

  Iller, A ^a   Lesiak, B ^a   Marks, J ^a   Sobczak, J W ^a  

^a INSTITUTE OF VACUUM TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CRYSTAL ORIENTATION; PARAMETER ESTIMATION; PASSIVATION; SPUTTERING; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL SHIFT; PASSIVATION LAYERS; X RAY PHOTOELECTRON SPECTROSCOPY DEPTH PROFILE ANALYSIS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030399199     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)