Buried selectively oxidized AlGaAs structures grown on nonplanar substrates

IEEE Photonics Technology Letters

Volumn 15, Issue 1, 2003, Pages 75-77

  Ku, P C ^a   Hernandez, Jacob A ^b   Chang Hasnain, C J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California Berkeley   (United States)

Author keywords

Distributed feedback devices; Materials processing; Optoelectronic device; Resonant cavity enhanced (RCE) photodetector

Indexed keywords

CAVITY RESONATORS; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; PHOTODETECTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; DISTRIBUTED FEEDBACK DEVICES; NONPLANAR SUBSTRATES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037248960     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.805848     Document Type: Article

References (9)

1. K. D. Choquette et al., "Advances in selective wet oxidation of AlGaAs alloys," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 916-926, June 1997.
2. x/AlGaAs DBR," Electron. Lett., vol. 33, no. 20, pp. 1702-1703, Sept. 1997.
3. L. D. Westbrook, I. D. Henning, A. W. Nelson, and P. J. Fiddyment, "Spectral properties of strongly coupled 1.5 mm DFB laser diodes," IEEE J. Quantum Electron., vol. QE-21, pp. 512-518, June 1985.
4. S. Oku, T. Ishii, R. Iga, and T. Hirono, "Fabrication and performance of AlGaAs-GaAs distributed Bragg reflector lasers and distributed feedback lasers utilizing first-order diffraction gratings formed by a periodic groove structure," IEEE J. Select. Topics Quantum Electron., vol. 5, pp. 682-687, May/June 1999.
5. W. Pan, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki, "Composition profile of an AlGaAs epilayer on a V-grooved substrate grown by low-pressure metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 67, no. 7, pp. 959-961, Aug. 1995.
6. L. Hofmann, D. Rudloff, I. Rechenberg, A. Knauer, J. Christen, and M. Weyers, "(AlGa)As composition profile analysis of trenches overgrown with MOVPE," J. Cryst. Growth, vol. 222, pp. 465-470, 2001.
7. E. Kapon, "Lateral pattering of quantum well heterostructures by growth on nonplanar substrates," in Epitaxial Microstructures, vol. 40 of Semiconductors and Semimetals: Academic, 1994, ch. 4, pp. 259-336.
8. R. L. Naone, E. R. Hegblom, B. J. Thibeault, and L. A. Coldren, "Oxidation of AlGaAs layers for tapered apertures in vertical-cavity lasers," Electron. Lett., vol. 33, no. 4, pp. 300-301, Feb. 1997.
9. S. Noda, N. Yamamoto, M. Imada, H. Kobayashi, and M. Okano, "Alignment and stacking of semiconductor photonic bandgaps by wafer-fusion," J. Lightwave Technol., vol. 17, pp. 1948-1955, Nov. 1999.