Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-μm InGaAsP-InP multiple-quantum-well lasers

IEEE Photonics Technology Letters

Volumn 12, Issue 8, 2000, Pages 969-971

  Belenky, G ^a,b   Reynolds Jr , C L ^b   Shterengas, L ^a   Hybertsen, M S ^b   Donetsky, D V ^a   Shtengel, G E ^b   Luryi, S ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; FERMI LEVEL; LASER MODES; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYZERS; THERMAL EFFECTS; TUNING;

DIFFERENTIAL GAIN; MULTIPLE QUANTUM WELL LASERS; RELATIVE INTENSITY NOISE; TEMPERATURE DEPENDENCE;

DISTRIBUTED FEEDBACK LASERS;

EID: 0343442463     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.867977     Document Type: Article

References (13)

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