SCOPUS 정보 검색 플랫폼

Volumn 38, Issue 9, 2002, Pages 1276-1281

Direct measurement of lateral carrier leakage in 1.3-μm InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers

(6) Belenky, Gregory b,e Shterengas, Leon b Reynolds Jr , C Lewis c Focht, Marlin W d Hybertsen, Mark S a,d Witzigmann, Bernd c

a IEEE

b STONY BROOK UNIVERSITY (United States)

c AGERE SYSTEMS (United States)

d JDS UNIPHASE (United States)

e Agere Systems (United States)

Author keywords

Carrier leakage; Lateral leakage; Semiconductor laser; Single mode laser

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC LOSSES; GAIN MEASUREMENT; HETEROJUNCTIONS; LASER MODE LOCKING; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS;

CARRIER LEAKAGE; EPITAXIAL INTERFACE; HETEROSTRUCTURE LASERS; INDIUM GALLIUM ARSENIDE PHOSPHIDE; PARASITIC CURRENT; SINGLE MODE LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036713177 PISSN: 00189197 EISSN: None Source Type: Journal
DOI: 10.1109/JQE.2002.802161 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.