Relation between photoreflectance excitation and absorption spectra for GaAs and GaN films

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 221-225

  Behn, U ^a   Brandt, O ^b   Grahn, H T ^b  

^a University of Applied Sciences Schmalkalden   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; EXCITONS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

PHOTOREFRACTIVE EXCITATION;

THIN FILMS;

EID: 0037245770     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1529290     Document Type: Article

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