Line shape analysis of photoreflectance excitation spectra of GaN films on 6H-SiC(0001)

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 1, 2002, Pages 144-150

  Behn, U ^a   Thamm, A ^b   Brandt, O ^b   Grahn, H T ^b  

^a University of Applied Sciences Schmalkalden   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOREFRACTIVE MATERIALS; SPECTRUM ANALYSIS;

PHOTOREFLECTANCE EXCITATION (PRE) SPECTRA;

SEMICONDUCTING FILMS;

EID: 0036650897     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200207)192:1<144::AID-PSSA144>3.0.CO;2-W     Document Type: Conference Paper

References (11)