Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 471-473

  Mimura, H ^a   Yilmazoglu, O ^b   Shimawaki, H ^a   Yokoo, K ^a   Mutamba, K ^b   Hartnagel, H ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; BRIDGE CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON TUNNELING; ELECTROSTATICS; INTEGRATED CIRCUIT MANUFACTURE; MICROMACHINING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES; SUBSTRATES; THRESHOLD VOLTAGE;

AIR BRIDGE ANODE; BRIDGE DIODE; CANTILEVER ANODE; CANTILEVER DIODE; WEDGE EMITTERS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0037233577     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1524139     Document Type: Article

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