A new SMPS non punch thru IGBT replace MOSFET in SMPS high frequency applications

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 2, Issue , 2003, Pages 953-957

  Francis, Richard ^a   Soldano, Marco ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Current sharing; IGBT; Non Punch Through; SMPS; Switching losses; Tail current

Indexed keywords

ELECTRIC POWER SYSTEMS; MOSFET DEVICES; OPTIMIZATION; SWITCHING THEORY;

POWER DENSITY;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0037230837     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. G.Miller, J.Sack, "A new concept for a non punch through IGBT with MOSFET like switching characteristics". - Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE, 1989 Page(s): 21-25 vol.1
2. "Ultra thin-wafer technology for a new 600 V-NPT-IGBT" Laska, T.; Matschitsch, M.; Scholz, W. Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on, 1997 Page(s): 361-364
3. International Rectifiers IRG4PC50W, IRGP50B60WD1 and IRFPS40N60K Data Sheets.
4. Switching characteristics of NPT- and PT-IGBTs under zero-voltage switching conditions Byeong-Mun Song; Huibin Zhu; Jih-Sheng Lai; Hefner, A.R., Jr. Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE, Volume: 1, 1999 Page(s): 722-728 vol.1.
5. B.J. Baliga, " Power Semiconductor Devices", PWS, 1995
6. Cotorogea, M.; Claudio, A.; Aguayo, J. "Detailed analysis of different short-circuit conditions for nonpunch-through IGBTs" - Power Electronics Congress, 2000. CIEP 2000. VII IEEE International, 2000
7. International Rectifiers AN-941 "Paralleling Power Mosfets"