Switching characteristics of NPT- and PT-IGBTs under zero-voltage switching conditions

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 1999, Pages 722-728

  Song, Byeong Mun ^a   Zhu, Huibin ^a   Lai, Jih Sheng ^a   Hefner Jr , Allen R ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; DIODES; ELECTRIC CURRENT MEASUREMENT; ELECTRIC INVERTERS; ELECTRIC SWITCHES; EQUIVALENT CIRCUITS; SWITCHING CIRCUITS;

NONPUNCH THROUGH INSULATED GATE BIPOLAR TRANSISTORS; PUNCH THROUGH INSULATED GATE BIPOLAR TRANSISTORS; SABER CIRCUIT SIMULATOR; SWITCHING LOSSES; ZERO VOLTAGE SWITCHING;

BIPOLAR TRANSISTORS;

EID: 0033317502     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)