Analysis of subsurface damage in silicon by a combined photothermal and photoluminescence heterodyne measurement

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7548-7551

  Geiler, H D ^a   Karge, H ^a   Wagner, M ^a   Ehlert, A ^b   Kerstan, M ^b   Helmreich, D ^b  

^a JenaWave Engineering and Consulting   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006348794     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365351     Document Type: Article

References (6)

1. A. C. Boccara and D. Foumier, in Photoacoustic and Thermal Wave Phenomena in Semiconductors, edited by A. Mandelis (North-Holland, New York, 1987), p. 288.
2. S. Käpplinger, F. Buchmann, and H. D. Geiler, J. Phys. (France) IV, Colloq. 4, 145 (1994).
3. A. Rosencwaig, in Photoacoustic and Thermal Wave Phenomena in Semiconductors, edited by A. Mandelis (North-Holland, New York, 1987), p. 98.
4. M. Wagner and H. D. Geiler, Meas. Sci. Technol. 2, 1088 (1991).
5. S. Johansson and J. Schweitz, J. Am. Ceram. Soc. 71, 617 (1988).
6. A. M. Mansanares, T. Velinov, Z. Bozoki, D. Fournier, and A. C. Boccara, J. Appl. Phys. 75, 3344 (1994).