Low-temperature polysilicon TFT with counter-doped lateral body terminal

Electronics Letters

Volumn 38, Issue 5, 2002, Pages 255-256

  Lee, Min Cheol ^a   Yoo, Juhn Suk ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; LASER APPLICATIONS; LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DOPING; THIN FILM DEVICES; THRESHOLD VOLTAGE;

THICK FILM TRANSISTORS (TFT);

TRANSISTORS;

EID: 0037186057     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020152     Document Type: Article

References (8)

1. A new polycrystalline silicon TFT with a single grain boundary in the channel
2. Polysilicon thin film transistor for analog circuit application
3. Kink free polycrystalline silicon double-gate elevated-channel thin film transistors
4. Reliability of low temperature poly-Si TFT employing counter-doped lateral body terminal
5. A characteristic of buried channel poly-Si TFTs
6. Anomalous leakage current in LPCVD polysilicon MOSFETs
7. Analysis of threshold voltage shift caused by bias stress in low temperature poly-Si TFTs
8. Physical models for degradation effects in polysilicon thin-film transistors