Chemical structure of ultrathin silicon nitride films grown by low-energy (0.25-5 keV) nitrogen implantation: An angle-resolved X-ray photoelectron spectroscopy Si 2p study

Journal of Physical Chemistry B

Volumn 106, Issue 16, 2002, Pages 4261-4265

  Palacio, Carlos ^a   Arranz, A ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ULTRATHIN SILICON NITRIDE FILMS;

NITROGEN; REACTION KINETICS; STRUCTURE (COMPOSITION); THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON NITRIDE;

EID: 0037172139     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp025520q     Document Type: Article

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