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Volumn 38, Issue 22, 2002, Pages 1390-1392

Investigations on Ta2O5/ZnO insulator-semiconductor interfaces

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CONDUCTANCE; ENERGY GAP; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TANTALUM COMPOUNDS; THIN FILMS; VOLTAGE MEASUREMENT; ZINC OXIDE;

EID: 0037168211     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020944     Document Type: Article
Times cited : (2)

References (10)
  • 1
    • 0035932264 scopus 로고    scopus 로고
    • Recent advances in ZnO materials and devices
    • Look, D.C.: 'Recent advances in ZnO materials and devices', Mat. Sci. Eng., 2001, B-80, pp. 383-387.
    • (2001) Mat. Sci. Eng. , vol.B-80 , pp. 383-387
    • Look, D.C.1
  • 2
    • 0036522398 scopus 로고    scopus 로고
    • Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films
    • Georgobiani, A.N., Gruzintsev, A.N., Volkov, V.T., and Vorobev, M.O.: 'Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films', Electron. Opt. Prop. Semicond., 2002, 36, pp. 284-288.
    • (2002) Electron. Opt. Prop. Semicond. , vol.36 , pp. 284-288
    • Georgobiani, A.N.1    Gruzintsev, A.N.2    Volkov, V.T.3    Vorobev, M.O.4
  • 4
    • 0000574170 scopus 로고    scopus 로고
    • The effects of thermal annealing on ZnO thin films grown by pulsed laser deposition
    • Lu, Y.F., Ni, H.Q., Mai, Z.H., and Ren, Z.M.: 'The effects of thermal annealing on ZnO thin films grown by pulsed laser deposition', J. Appl. Phys., 2000, 88, pp. 498-502.
    • (2000) J. Appl. Phys. , vol.88 , pp. 498-502
    • Lu, Y.F.1    Ni, H.Q.2    Mai, Z.H.3    Ren, Z.M.4
  • 5
    • 0035360909 scopus 로고    scopus 로고
    • Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si
    • Bae, S.H., Lee, S.Y., Kim, H.Y., and Im, S.: 'Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si', Opt. Mater., 2001, 17, pp. 327-330.
    • (2001) Opt. Mater. , vol.17 , pp. 327-330
    • Bae, S.H.1    Lee, S.Y.2    Kim, H.Y.3    Im, S.4
  • 7
    • 0034824148 scopus 로고    scopus 로고
    • Polycrystalline ZnO thin films on Si (100) deposited by filtered cathodic vacuum arc
    • Xu, X.L., Lau, S.E., Chen, J.S., Chen, G.Y., and Tay, B.K.: 'Polycrystalline ZnO thin films on Si (100) deposited by filtered cathodic vacuum arc', J. Cryst. Growth, 2001, 223, pp. 201-205.
    • (2001) J. Cryst. Growth , vol.223 , pp. 201-205
    • Xu, X.L.1    Lau, S.E.2    Chen, J.S.3    Chen, G.Y.4    Tay, B.K.5
  • 9
    • 0035848117 scopus 로고    scopus 로고
    • Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer
    • Nahhas, A., Kim, H.K., and Blachere, J.: 'Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer', Appl. Phys. Lett., 2001, 78, pp. 1511-1513.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 1511-1513
    • Nahhas, A.1    Kim, H.K.2    Blachere, J.3
  • 10
    • 0019056629 scopus 로고
    • A single frequency approximation for interface state density determination
    • Hill, W.A., and Coleman, C.C.: 'A single frequency approximation for interface state density determination', Solid-State Electron., 1980, 23, pp. 987-993.
    • (1980) Solid-State Electron. , vol.23 , pp. 987-993
    • Hill, W.A.1    Coleman, C.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.