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Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 247-251

Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

(3) Anwand, W a Brauer, G a Skorupa, W a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

6H SiC; N + and Al + co implantation; Slow positron spectroscopy; Vacancy type defects

Indexed keywords

AMORPHIZATION; DOPPLER EFFECT; ION IMPLANTATION; POSITRONS;

POSITRON IMPLANTATION SPECTROSCOPY;

SILICON CARBIDE;

EID: 0035852172 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00496-2 Document Type: Article

Times cited : (5)

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