SCOPUS 정보 검색 플랫폼

Volumn 504, Issue , 2002, Pages 108-114

Hydrogen desorption kinetics and Ge2H6 reactive sticking probabilities on Ge-adsorbed Si(0 1 1)

a University of Illinois at Urbana Champaign (United States)

Author keywords

Auger electron spectroscopy; Models of surface kinetics; Silicon; Surface chemical reaction; Thermal desorption spectroscopy

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; DESORPTION; EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; HYDRIDES; HYDROGEN; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SURFACE STRUCTURE; THERMAL EFFECTS;

DESORPTION KINETICS;

SILICON;

EID: 0037140018 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01922-7 Document Type: Article

Times cited : (6)

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