Crystal growth of Al-doped ZnO films under different sputtering conditions

International Journal of Modern Physics B

Volumn 16, Issue 1-2, 2002, Pages 287-293

  Goh, E G ^a   Gong, H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; ALUMINUM ZINC OXIDE; GLASS; NITROGEN; UNCLASSIFIED DRUG; ZINC OXIDE;

CONFERENCE PAPER; CRYSTAL; ELECTRICITY; FILM; HEATING; MICROWAVE OVEN; OPTICS; PRESSURE; RADIOFREQUENCY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0037138117     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202009779     Document Type: Conference Paper

References (10)