First-principles electronic structure calculations of BaSi7N10 with both corner- and edge-sharing SiN4 tetrahedra

Journal of Alloys and Compounds

Volumn 336, Issue 1-2, 2002, Pages 1-4

  Fang, C M ^a   Hintzen, H T ^a   De With, G ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Electronic band structure; Nitride materials; Semiconductors

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY GAP; NITROGEN; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON; SILICON NITRIDE;

DENSITY FUNCTIONAL THEORY (DFT);

BARIUM COMPOUNDS;

EID: 0037129095     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(01)01866-7     Document Type: Article

References (32)