Study of thermal treated a-Si implanted with Er and O ions

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13153-13159

  Plugaru, R ^a   Mendez B ^a   Piqueras, J ^a   Tate, T J ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; COMPLEXATION; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY;

CATHODOLUMINESCENCE IMAGES; ERBIUM OXIDE; ERBIUM SILICON;

AMORPHOUS SILICON;

EID: 0037122104     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/363     Document Type: Article

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