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Journal of Physics D: Applied Physics

Volumn 35, Issue 4, 2002, Pages 295-298

Visible luminescence of erbium oxide layers grown on crystalline and amorphous silicon

(6) Nogales, E a Mendez B a Piqueras, J a Plugaru, R b Coraci, A b Garcia J A c

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES (Romania)

c UNIVERSITY OF THE BASQUE COUNTRY UPV EHU (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ERBIUM; ERBIUM COMPOUNDS; NITROGEN; OXYGEN; SUBSTRATES; VAPOR DEPOSITION;

ANNEALING TEMPERATURE; ERBIUM OXIDE LAYERS; RADIATIVE TRANSITIONS;

CATHODOLUMINESCENCE;

EID: 0037148713 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/35/4/303 Document Type: Article

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.