Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12761-12765

  Antonelli, A ^a   Justo, J F ^b   Fazzio, A ^b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; ELECTRONIC DENSITY OF STATES; ELECTROSTATICS; PROBABILITY DENSITY FUNCTION;

AB INITIO TOTAL ENERGY METHODS; ARSENIC SEGREGATION; CHARGE EXCHANGE; DENSITY FUNCTIONAL THEORY;

SEMICONDUCTING SILICON;

EID: 0037122103     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/314     Document Type: Article

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