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Volumn 92, Issue 10, 2002, Pages 6010-6013
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Calculated potential profile near charged threading dislocations at metal/semiconductor interfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
ACCEPTOR DENSITY;
ACCEPTOR ENERGY;
BALLISTIC ELECTRON EMISSION MICROSCOPY;
CONDUCTION-BAND MINIMUM;
FINITE ELEMENT CALCULATIONS;
GAN FILM;
LATTICE SPACING;
LINEAR DENSITY;
METAL SEMICONDUCTOR INTERFACE;
NEAR-SURFACE;
POTENTIAL BARRIERS;
POTENTIAL PROFILES;
THREADING DISLOCATION;
MOLECULAR BEAM EPITAXY;
PLATINUM;
GALLIUM NITRIDE;
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EID: 0037113041
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1516272 Document Type: Article |
Times cited : (6)
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References (18)
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