Resonant tunneling via donor X states in the AlAs barrier and binding energies of donors bound to XXY and XZ valleys

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 7, 2002, Pages 733021-733024

  Khanin, Yu N ^a   Vdovin, E E ^a   Dubrovskii, Yu V ^a   Novoselov, K S ^b   Carlsson, S B ^c   Omling, P ^c  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM;

ARTICLE; BINDING KINETICS; ELECTRIC CONDUCTIVITY; ENERGY; MAGNETISM; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; OSCILLATION; QUANTUM MECHANICS; TRANSPORT KINETICS;

EID: 0037104191     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.073302     Document Type: Article

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